Hidetoshi Oheda: search on Z-Library

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1

Distribution of recombination coefficients of hole traps in phosphorus-doped hydrogenated amorphous silicon

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 745 KB

english, 1987

2

Lifetime distribution of photoluminescence in a-Si:H based alloys

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

1996

Language:

english

File:

PDF, 380 KB

english, 1996

3

Photoinduced structural instability around the Si–H bond in undoped a-Si:H and related wide-gap alloys

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

2004

Language:

english

File:

PDF, 287 KB

english, 2004

4

Two characteristic photoluminescence states in a-Si:H and its alloys

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

2006

Language:

english

File:

PDF, 404 KB

english, 2006

5

Selective dominance of photoluminescence lifetime in a-Si:H-based alloys

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

2000

Language:

english

File:

PDF, 140 KB

english, 2000

6

Spectral dependence of vibrational lifetime of Si–H stretching band in a-Si:H

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

2002

Language:

english

File:

PDF, 104 KB

english, 2002

7

Drift mobility under in-plane conduction in hydrogenated amorphous silicon nipi multilayers

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

1991

Language:

english

File:

PDF, 270 KB

english, 1991

8

Density of Si–H bonds responsible for structural flexibility in a-Si:H

Hidetoshi Oheda

Journal:

Journal of Non-Crystalline Solids

Year:

1998

Language:

english

File:

PDF, 82 KB

english, 1998

9

Dispersive photoluminescence decay of a-Si:H

Hidetoshi Oheda, Satoshi Yamasaki, Akihisa Matsuda, Kazunobu Tanaka

Journal:

Journal of Non-Crystalline Solids

Year:

1983

Language:

english

File:

PDF, 176 KB

english, 1983

10

Phase-shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 767 KB

english, 1981

11

Method for evaluation of the emissivity spectrum of a localized vibrational absorption band

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 564 KB

english, 2002

12

Spatial carrier separation evaluated with a relaxation time distribution in doping-modulated amorphous silicon multilayers

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 777 KB

english, 1991

13

Photoinduced structural instability around the Si-H bond in undoped hydrogenated amorphous silicon

Oheda, Hidetoshi

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 181 KB

english, 2003

14

Change in the optical-absorption coefficient induced by optical modulation of the internal electric field in doping-modulated amorphous silicon multilayers

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 790 KB

english, 1990

15

Two characteristic photoluminescence states and their metastability in hydrogenated amorphous silicon and its alloys

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 499 KB

english, 2007

16

Real-time modulation of Si-H vibration in hydrogenated amorphous silicon

Oheda, Hidetoshi

Journal:

Physical Review B

Year:

1999

Language:

english

File:

PDF, 172 KB

english, 1999

17

Spectral dependence of lifetime of excited Si-H stretching vibration in hydrogenated amorphous silicon

Oheda, Hidetoshi

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 95 KB

english, 2002

18

Photoinduced structural instability in a hydrogenated amorphous silicon-germanium alloy with high structural inhomogeneity

Oheda, Hidetoshi

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 65 KB

english, 2005

19

bond in hydrogenated amorphous silicon based wide-gap alloys

Oheda, Hidetoshi

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 255 KB

english, 2004

20

Enhanced drift mobility under in-plane conduction in doping-modulated amorphous silicon multilayers

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 915 KB

english, 1993

21

Characterization of transport parameters of hole traps in phosphorus-doped hydrogenated amorphous silicon

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 960 KB

english, 1987

22

Excitation-energy dependence of electron lifetime in phosphorus-doped hydrogenated amorphous silicon

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 821 KB

english, 1986

23

Current–voltage characteristics under in-plane conduction in doping-modulated amorphous silicon multilayers

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 944 KB

english, 1992

24

Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy

Yamasaki, Satoshi, Okushi, Hideyo, Matsuda, Akihisa, Oheda, Hidetoshi, Hata, Nobuhiro, Tanaka, Kazunobu

Journal:

Japanese Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 600 KB

english, 1981

25

[AIP PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 - Flagstaff, Arizona (USA) (26-30 July 2004)] AIP Conference Proceedings - Structural Instability Depending on a Structural Configuration at the Surroundings of the Si-H bond in a-Si:H

Oheda, Hidetoshi

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

26

Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy

Okushi, Hideyo, Tokumaru, Yozo, Yamasaki, Satoshi, Oheda, Hidetoshi, Tanaka, Kazunobu

Journal:

Japanese Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 449 KB

english, 1981

27

Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent

Oheda, Hidetoshi, Yamasaki, Satoshi, Yoshida, Toshihiko, Matsuda, Akihisa, Okushi, Hideyo, Tanaka, Kazunobu

Journal:

Japanese Journal of Applied Physics

Year:

1982

Language:

english

File:

PDF, 154 KB

english, 1982

28

The Modulated Photocurrent of Amorphous As 2 Se 3

Oheda, Hidetoshi

Journal:

Japanese Journal of Applied Physics

Year:

1977

File:

PDF, 613 KB

1977

29

The Residual Photocurrent of Amorphous As 2 Se 3

Oheda, Hidetoshi, Namikawa, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 219 KB

english, 1976

30

A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H Films

Hata, Nobuhiro, Yamasaki, Satoshi, Oheda, Hidetoshi, Matsuda, Akihisa, Okushi, Hideyo, Tanaka, Kazunobu

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 511 KB

1981

31

Effects of Magnetic Field on Electron Transfer and Velocity-Field Characteristic in Gallium Arsenide

Sasaki, Akio, Oheda, Hidetoshi, Tanaka, Tetsuo

Journal:

Journal of the Physical Society of Japan

Year:

1972

File:

PDF, 871 KB

1972

32

[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - Difference in nature of photoinduced defects and structural instability between surroundings of Si[Single Bond]H and Si[Single Bond]H2 bonds in a-Si:H

Oheda, Hidetoshi

Year:

2007

File:

PDF, 598 KB

2007